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NGB8207N Ignition IGBT
20 A, 365 V, N-Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
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* Ideal for Coil-on-Plug and Driver-on-Coil Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * * * * * * *
Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Minimum Avalanche Energy - 500 mJ Gate Resistor (RG) = 70 W This is a Pb-Free Device
20 AMPS 365 VOLTS VCE(on) = 1.5 V Typ @ IC = 10 A, VGE . 4.5 V
C
G
RG RGE
E D2PAK CASE 418B STYLE 4
Applications
* Ignition Systems
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed Continuous Gate Current Transient Gate Current (t 2 ms, f 100 Hz) ESD (Charged-Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C (Note 1) Operating & Storage Temperature Range Symbol VCES VGE IC IG IG ESD ESD 8.0 ESD PD TJ, Tstg 500 165 1.1 -55 to +175 V W W/C C Value 365 $15 20 50 1.0 20 2.0 Unit V V ADC AAC mA mA kV kV 1 Gate 1
MARKING DIAGRAM
4 Collector
NGB 8207NG AYWW 3 Emitter 2 Collector
NGB8207N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Assuming infinite heatsink Case-to-Ambient
ORDERING INFORMATION
Device NGB8207NT4G Package D2PAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Shipping 800 / Tape & Reel
(c) Semiconductor Components Industries, LLC, 2007
1
January, 2007 - Rev. 0
Publication Order Number: NGB8207N/D
NGB8207N
UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C)
Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25C VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2) Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3) 2. When surface mounted to an FR4 board using the minimum recommended pad size. 3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 0.9 50 275 C/W C/W C Symbol EAS 500 306 EAS(R) 2000 mJ Value Unit mJ
ELECTRICAL CHARACTERISTICS
Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES VCE = 24 V VGE = 0 V VCE = 250 V VGE = 0 V Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA TJ = -40C to 175C TJ = -40C to 175C TJ = 25C TJ = 25C TJ = 175C TJ = -40C TJ = 25C TJ = 175C TJ = -40C Reverse Collector-Emitter Leakage Current ICES(R) VCE = -24 V IG = $5.0 mA VGE = $10 V TJ = 25C TJ = 175C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor Gate-Emitter Resistor ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGE(th) IC = 1.0 mA VGE = VCE Threshold Temperature Coefficient (Negative) Collector-to-Emitter On-Voltage VCE(on) IC = 6.0 A VGE = 4.0 V IC = 10 mA VGE = 4.5 V *Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. TJ = 25C TJ = 175C TJ = -40C TJ = 25C TJ = 25C TJ = 175C TJ = -40C 1.2 0.6 1.4 12 1.0 0.8 1.15 - 1.5 0.8 1.7 12 1.3 1.1 1.4 0.62 2.0 1.2 2.0 12 1.6 1.4 1.75 1.0 mV/C V V BVGES IGES RG RGE TJ = -40C to 175C TJ = -40C to 175C TJ = -40C to 175C TJ = -40C to 175C 14.25 - 70 - 30 30 29 0.10 20 - 12 500 325 340 350 365 0.1 1.0 85 0.25 33 36 32 0.25 25 0.03 13 700 70 16 25 375 390 2.0 5 150 2.5 39 42 35 0.85 40 0.3 14.5 1000 V mA W kW mA V mA V Symbol Test Conditions Temperature Min Typ Max Unit
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NGB8207N
ELECTRICAL CHARACTERISTICS
Characteristic ON CHARACTERISTICS (Note 4) Collector-to-Emitter On-Voltage VCE(on) IC = 8.0 A VGE = 4.0 V TJ = 25C TJ = 175C TJ = -40C TJ = 25C IC = 10 A VGE = 3.7 V TJ = 175C TJ = -40C TJ = 25C IC = 10 A VGE = 4.0 V TJ = 175C TJ = -40C TJ = 25C IC = 10 A VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 15 A VGE = 4.0 V TJ = 175C TJ = -40C TJ = 25C IC = 20 A VGE = 4.0 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time (Resistive) Low Voltage Rise Time (Resistive) Low Voltage Turn-Off Delay Time (Resistive) Low Voltage Fall Time (Resistive) Low Voltage Turn-On Delay Time (Resistive) High Voltage Rise Time (Resistive) High Voltage Turn-Off Delay Time (Resistive) High Voltage Fall Time (Resistive) High Voltage td(on) tr td(off) tf td(on) tr td(off) tf VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W VCE = 14 V RL = 1.0 W VGE = 5.0 V RG = 1000 W VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W VCE = 300 V RL = 46 W VGE = 5.0 V RG = 1000 W TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C TJ = 25C 0.5 2.0 2.0 8.0 0.5 0.7 4.0 6.0 0.55 2.32 2.5 10 0.65 1.8 4.7 10 0.7 2.7 3.0 13 0.75 2.0 6.0 15 mSec CISS COSS CRSS f = 10 kHz VCE = 25 V TJ = 25C 750 75 4 810 90 7 900 105 12 pF gfs IC = 6.0 A VCE = 5.0 V TJ = 175C TJ = -40C TJ = 25C 1.1 1.0 1.2 1.2 1.1 1.3 1.1 1.1 1.35 1.2 1.1 1.2 1.45 1.6 1.5 1.6 2.0 1.6 - 1.5 1.3 1.5 1.6 1.45 1.7 1.5 1.4 1.7 1.5 1.4 1.6 1.85 1.9 1.9 2.1 2.4 2.1 15.8 1.7 1.6 1.85 1.9 1.8 2.0 1.85 1.75 2.1 1.8 1.7 2.0 2.15 2.4 2.25 2.6 3.1 2.5 - Mhos V Symbol Test Conditions Temperature Min Typ Max Unit
*Maximum Value of Characteristic across Temperature Range. 4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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NGB8207N
TYPICAL ELECTRICAL CHARACTERISTICS
50 45 PEAK CURRENT (A) 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 300 CLAMPING TIME (mS) 140 mS 25.6 A 660 mJ 175 mS 21 A 675 mJ PEAK CURRENT (A) 70 mS 40 A 510 mJ 40 35 30 25 20 15 10 5 0 0 50 100 150 200 250 CLAMPING TIME (mS) 140 mS 16 A 400 mJ 230 mS 9 A 375 mJ
35 mS 39.8 A 250 mJ
Figure 1. Typical Self Clamped Inductive Switching Performance (SCIS) @ 255C
VCE(on), COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 2.5 3.0 2.5 2.0 1.5 1.0 0.5
Figure 2. Typical Self Clamped Inductive Switching Performance (SCIS) @ 1505C
2.0 VGE = 4.0 V @ TJ = -40C 1.5 VGE = 4.0 V @ TJ = 25C 1.0 VGE = 4.0 V @ TJ = 175C 0 2 4 6 8 10 12 14 16 18 20 22
IC = 20 A IC = 15 A IC = 10 A IC = 6.0 A IC = 8.0 A
0.5
0 -50 -25
0
25
50
75
100
125
150 175
IC, COLLECTOR (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 3. Collector-to-Emitter Voltage vs. Collector Current
60 IC, COLLECTOR CURRENT (A) 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4.8 V VGE = 4.5 V IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10 0 0
Figure 4. Collector-to-Emitter Voltage vs. Junction Temperature
VGE = 10 V 5.0 V to 6.5 V VGE = 2.0 V to 4.2 V
VGE = 10 V 4.8 V to 6.5 V VGE = 2.0 V to 4.0 V
4.5 V
4.2 V
1
2
3
4
5
6
7
8
9
10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 5. On-Region Characteristics @ TJ = 255C http://onsemi.com
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Figure 6. On-Region Characteristics @ TJ = -405C
NGB8207N
TYPICAL ELECTRICAL CHARACTERISTICS
60 10 V IC, COLLECTOR CURRENT (A) 50 VGE = 2.2 V to 4.8 V 40 30 20 10 0 0 1 2 3 4 5 6 7 VGE = 2.0 V 8 9 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6.5 V 6.0 V 5.5 V IC, COLLECTOR CURRENT (A) 5.0 V 60 VCE 5.0 V 50 TJ = 25C 40 30 20 10 0 1.0 2.0 3.0 4.0 5.0 6.0 VGE, GATE-TO-EMITTER VOLTAGE (V) TJ = 175C TJ = -40C
Figure 7. On-Region Characteristics @ TJ = 1755C
100,000 LEAKAGE CURRENT (mA) VGE(th), GATE THRESHOLD VOLTAGE (V) 2.0
Figure 8. Transfer Characteristics
MEAN + 4s 1.75 MEAN 1.5 MEAN - 4s 1.25 1.0 0.75 0.5 -50 -25
10,000 VCE = -24 V
1000
100 VCE = 320 V 10
1 -50 -25
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 9. Collector-to-Emitter Leakage Current vs. Temperature
10,000 TJ = 25C VGE = 0 V C, CAPACITANCE (pF) 1000 Ciss t, TIME (ms) 100 Coss 10 Crss 1 0 20 40 60 80 100 120 140 160 180 200 COLLECTOR-TO-EMITTER VOLTAGE (V) 0.1 25 10 100
Figure 10. Gate Threshold Voltage vs. Temperature
VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 10 A
tf td(off) tr
1
td(on)
50
75
100
125
150
175
TEMPERATURE (C)
Figure 11. Capacitance Variation
Figure 12. Resistive Switching Time Variation vs. Temperature http://onsemi.com
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NGB8207N
TYPICAL ELECTRICAL CHARACTERISTICS
1000 IC, COLLECTOR CURRENT (A) VCC = 300 V IC = 10 A VGE = 5.0 V L = 300 mH RG = 1000 W 100 VGE = 4.0 V Single Pulse TC = 25C 10
tr
t, TIME (mS)
100 td(on) 10 tf td(off)
10 ms 100 ms VCE(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 ms 10 ms dc
1
1 25 50 75 100 125 150 175 TEMPERATURE (C)
0.1 1
Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) 10 100 1000
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 13. Inductive Switching Time Variation vs. Temperature
1 Duty Cycle = 0.5 RqJC(t), TRANSIENT THERMAL RESISTANCE (C/W)
Figure 14. Forward Biased Safe Operating Area
0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.00001 0.0001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJC(t)
0.01 0.000001
Figure 15. Best Case Transient Thermal Resistance (Non-normalized Junction-to-Case Mounted on Cold Plate)
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NGB8207N
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B-04 ISSUE J
C E -B-
4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B-01 THRU 418B-03 OBSOLETE, NEW STANDARD 418B-04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
A
1 2 3
S
-T-
SEATING PLANE
K G D H
3 PL M
W J
0.13 (0.005)
TB
M
P U L M
STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR
SOLDERING FOOTPRINT*
8.38 0.33
F VIEW W-W
10.66 0.42
1.016 0.04
5.08 0.20
3.05 0.12 17.02 0.67
SCALE 3:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NGB8207N/D

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